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Cited article:

Effect of hot-carrier energy relaxation on main properties of collapsing field domains in avalanching GaAs

V. Palankovski, S. Vainshtein, V. Yuferev, J. Kostamovaara and V. Egorkin
Applied Physics Letters 106 (18) (2015)
https://doi.org/10.1063/1.4921006

A temperature dependent model for the saturation velocity in semiconductor materials

R Quay, C Moglestue, V Palankovski and S Selberherr
Materials Science in Semiconductor Processing 3 (1-2) 149 (2000)
https://doi.org/10.1016/S1369-8001(00)00015-9

Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's

P. Heremans, G. Van den Bosch, R. Bellens, G. Groeseneken and H.E. Maes
IEEE Transactions on Electron Devices 37 (4) 980 (1990)
https://doi.org/10.1109/16.52433

A new self-consistent modeling approach to investigating MOSFET degradation

W. Hansch, A.V. Schwerin and F. Hofmann
IEEE Electron Device Letters 11 (9) 362 (1990)
https://doi.org/10.1109/55.62956

Enhanced transconductance in deep submicrometer MOSFET

W. Hansch and H. Jacobs
IEEE Electron Device Letters 10 (7) 285 (1989)
https://doi.org/10.1109/55.29654