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Cited article:

Electrical Effect of Nitrogen Implanted Into LDD of MOSFETs

Yoo Seon Song, Markus Lenski, Mohammed F. Karim, Keith Flynn, Jan Hoentschel, Carsten Peters, Jens-Uwe Sachse, Ömür Işıl Aydin, Jun Wu, Bastian Haußdörfer, Mahesh Siddabathula, Konrad Semmler and Jürgen Daleiden
IEEE Journal of the Electron Devices Society 12 627 (2024)
https://doi.org/10.1109/JEDS.2024.3442474