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Cited article:

2D BORON DISTRIBUTIONS AFTER ION IMPLANT AND TRANSIENT ANNEAL

P.J. PEARSON, C. HILL

J. Phys. Colloques, 49 C4 (1988) C4-515-C4-518

DOI: https://doi.org/10.1051/jphyscol:19884107

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This article has been cited by the following article(s):

A novel delineation technique for 2D-profiling of dopants in crystalline silicon

L. Gong, L. Frey, S. Bogen and H. Ryssel
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 74 (1-2) 186 (1993)
https://doi.org/10.1016/0168-583X(93)95040-C

Ion implantation in bipolar technology

Chris Hill and Peter Hunt
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 55 (1-4) 1 (1991)
https://doi.org/10.1016/0168-583X(91)96125-5