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Cited article:

Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers

Sunhee Lee, Hoon Ryu, Huw Campbell, et al.
Physical Review B 84 (20) (2011)
https://doi.org/10.1103/PhysRevB.84.205309

In-plane transport properties of heavily δ-doped GaAsn-i-p-isuperlattices: Metal-insulator transition, weak and strong localization

T. Schmidt, St. G. Müller, K. H. Gulden, C. Metzner and G. H. Döhler
Physical Review B 54 (19) 13980 (1996)
https://doi.org/10.1103/PhysRevB.54.13980

Activation energy of the hopping conductivity of the δ-doped semiconductor in the low-density limit

E. I. Levin, M. E. Raikh and B. I. Shklovskii
Physical Review B 44 (20) 11281 (1991)
https://doi.org/10.1103/PhysRevB.44.11281

Atomic layer doped field‐effect transistor fabricated using Si molecular beam epitaxy

Kiyokazu Nakagawa, Aart A. van Gorkum and Yasuhiro Shiraki
Applied Physics Letters 54 (19) 1869 (1989)
https://doi.org/10.1063/1.101263