INTERFACE RECOMBINATION IN GaAs-GaAlAs QUANTUM WELLS
J. Phys. Colloques, 48 C5 (1987) C5-135-C5-138
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Transient photoluminescence in GaInAs/InP multiple quantum wells
P J Bishop, M E Daniels, B K Ridley and M HopkinsonSemiconductor Science and Technology 8 (9) 1758 (1993)
https://doi.org/10.1088/0268-1242/8/9/016
Temperature dependence of the radiative and nonradiative recombination time in GaAs/AlxGa1−xAs quantum-well structures
M. Gurioli, A. Vinattieri, M. Colocci, et al.Physical Review B 44 (7) 3115 (1991)
https://doi.org/10.1103/PhysRevB.44.3115
Radiative and non-radiative recombination in GaAs/AlxGa1−xAs quantum wells
B. Sermage, F. Alexandre, J. Beerens and P. TroncSuperlattices and Microstructures 6 (4) 373 (1989)
https://doi.org/10.1016/S0749-6036(89)80004-7
Luminescence of GaAs/(Al,Ga)As superlattices grown on Si substrates, containing a high density of threading dislocations: Strong effect of the superlattice period
T. Y. Liu, P. M. Petroff and H. KroemerJournal of Applied Physics 64 (12) 6810 (1988)
https://doi.org/10.1063/1.341994