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Cited article:

Transverse interplanar forces and phonon spectra of strained Si, Ge, and Si/Ge superlattices

Aref Ben Amar, A. Qteish and N. Meskini
Physical Review B 53 (9) 5372 (1996)
https://doi.org/10.1103/PhysRevB.53.5372

Temperature dependences of theE0transitions in bulk Ge and a Ge-rich (Si)m/(Ge)nsuperlattice

P. A. Dafesh and K. L. Wang
Physical Review B 45 (4) 1712 (1992)
https://doi.org/10.1103/PhysRevB.45.1712

Light Scattering in Semiconductor Structures and Superlattices

M. W. C. Dharma-wardana, G. C. Aers, D. J. Lockwood and J.-M. Baribeau
NATO ASI Series, Light Scattering in Semiconductor Structures and Superlattices 273 81 (1991)
https://doi.org/10.1007/978-1-4899-3695-0_8

Interplanar forces and phonon spectra of strained Si and Ge:Ab initiocalculations and applications to Si/Ge superlattices

A. Qteish and E. Molinari
Physical Review B 42 (11) 7090 (1990)
https://doi.org/10.1103/PhysRevB.42.7090

Interpretation of Raman spectra of Ge/Si ultrathin superlattices

M. W. C. Dharma-wardana, G. C. Aers, D. J. Lockwood and J.-M. Baribeau
Physical Review B 41 (8) 5319 (1990)
https://doi.org/10.1103/PhysRevB.41.5319

Phonon frequencies for Si-Ge strained-layer superlattices calculated in a three-dimensional model

R. A. Ghanbari, J. D. White, G. Fasol, C. J. Gibbings and C. G. Tuppen
Physical Review B 42 (11) 7033 (1990)
https://doi.org/10.1103/PhysRevB.42.7033

Longitudinal phonons in Si/Ge superlattices

E A Montie, G F A van de Walle, D J Gravesteijn, A A van Gorkum and W J O Teesselink
Semiconductor Science and Technology 4 (10) 889 (1989)
https://doi.org/10.1088/0268-1242/4/10/011

Nonlocal resonant optical phonons and the local properties of ultrathin Ge layers on Si(100)

J. C. Tsang, S. S. Iyer, P. Pukite and M. Copel
Physical Review B 39 (18) 13545 (1989)
https://doi.org/10.1103/PhysRevB.39.13545

Theoretical analysis of Raman spectra of finite-stage Si/Si-Ge Fibonacci superlattices

G. Aers, M. Dharma-wardana, G. Schwartz and J. Bevk
Physical Review B 39 (2) 1092 (1989)
https://doi.org/10.1103/PhysRevB.39.1092