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Cited article:

Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells

W.S. Fu, J.S. Harris, R. Binder, et al.
IEEE Journal of Quantum Electronics 28 (10) 2404 (1992)
https://doi.org/10.1109/3.159547

Effect of magnetic fields on exciton binding energies in type-II GaAs-AlAs quantum-well structures

Spiros Branis, J. Cen and K. Bajaj
Physical Review B 44 (20) 11196 (1991)
https://doi.org/10.1103/PhysRevB.44.11196

Radiative recombination mechanisms in staggered-alignment (GaAs)/(AlAs) heterostructures

B. Wilson, Carl Bonner, R. Spitzer, et al.
Physical Review B 40 (3) 1825 (1989)
https://doi.org/10.1103/PhysRevB.40.1825

Symmetry of conduction states for GaAs-AlAs type-II superlattices under uniaxial stress

P. Lefebvre, B. Gil, H. Mathieu and R. Planel
Physical Review B 39 (8) 5550 (1989)
https://doi.org/10.1103/PhysRevB.39.5550

Theoretical analysis of electronic structures of short-period superlattices (GaAs)_{m}/(AlAs)_{n} and corresponding alloys Al_{n/(m+n)}Ga_{m/(m+n)}As

Jian-Bai Xia
Physical Review B 38 (12) 8358 (1988)
https://doi.org/10.1103/PhysRevB.38.8358

Effects of electronic coupling on the band alignment of thin GaAs/AlAs quantum-well structures

K. Moore, P. Dawson and C. Foxon
Physical Review B 38 (5) 3368 (1988)
https://doi.org/10.1103/PhysRevB.38.3368

Interface roughness and the dispersion of confined LO phonons in GaAs/AlAs quantum wells

G. Fasol, M. Tanaka, H. Sakaki and Y. Horikoshi
Physical Review B 38 (9) 6056 (1988)
https://doi.org/10.1103/PhysRevB.38.6056

Carrier dynamics and recombination mechanisms in staggered-alignment heterostructures

B.A. Wilson
IEEE Journal of Quantum Electronics 24 (8) 1763 (1988)
https://doi.org/10.1109/3.7106

Optically Detected Magnetic Resonance Study of a Type-ii GaAs-AlAs Multiple Quantum Well

H. van Kesteren, E. Cosman, F. Greidanus, et al.
Physical Review Letters 61 (1) 129 (1988)
https://doi.org/10.1103/PhysRevLett.61.129