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Cited article:

AMORPHOUS HYDROGENATED ALLOYS : A COMPARATIVE EXAFS STUDY OF a-Si_1-xC_x : H, a-Si_{1- x}Ge_x : H, a-SiN_x : H AT THE SILICON K-EDGE

A. FILIPPONI, P. FIORINI, F. EVANGELISTI, A. BALERNA, S. MOBILIO

J. Phys. Colloques, 47 C8 (1986) C8-357-C8-361

DOI: https://doi.org/10.1051/jphyscol:1986870

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Epitaxial Growth and Band Structure Effects at the Si/Ge(111) Interface

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