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Cited article:

THE STRUCTURAL ENVIRONMENT OF Te DOPANTS IN GaAs USING EXAFS IN FLUORESCENCE MODE

G.N. GREAVES, P.J. HALFPENNY, G.M. LAMBLE, K.J. ROBERTS

J. Phys. Colloques, 47 C8 (1986) C8-901-C8-904

DOI: https://doi.org/10.1051/jphyscol:19868175

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This article has been cited by the following article(s):

Environments of ion-implanted As and Ga impurities in amorphous silicon

G. Greaves, A. Dent, B. Dobson, et al.
Physical Review B 45 (12) 6517 (1992)
https://doi.org/10.1103/PhysRevB.45.6517

Vacancy-associated Te sites in GaAs

K. Wuyts, G. Langouche, M. Van Rossum and R. Silverans
Physical Review B 45 (11) 6297 (1992)
https://doi.org/10.1103/PhysRevB.45.6297

Impurity lattice sites after implantation of Te and Sb in GaAs: Search for the DX centre

G. L. Zhang, D. Mo, Z. N. Liang and L. Niesen
Hyperfine Interactions 56 (1-4) 1661 (1990)
https://doi.org/10.1007/BF02405491