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Cited article:

3.0 kV β-Ga2O3-Based Vertical p-n Heterojunction Diodes With Helium- Implanted Edge Termination

Jiajun Han, Na Sun, Xinyi Pei, Rui Wang, Kangkai Fan, Renqiang Zhu, Min Wang, Xi Zhu, Xiaohua Li, Jingbo Li, Nengjie Huo, Jiandong Ye and Xinke Liu
IEEE Transactions on Electron Devices 72 (6) 2879 (2025)
https://doi.org/10.1109/TED.2025.3560277

Energetics of nanoscale films with self–assembled oxide/metal pillars in nitride matrix

Sreekar Rayaprolu, Ahmad Ahmad, Kyle Starkey, Zedong Hu, Juanjuan Lu, Haiyan Wang and Anter El–Azab
Materialia 101845 (2023)
https://doi.org/10.1016/j.mtla.2023.101845

The influence of crystallography and oxide and metallic types on the structure and properties of metal-ceramic interfaces

J.C. Yang, Y.C. Lu and S.L. Saas
Materials Science and Engineering: A 162 (1-2) 97 (1993)
https://doi.org/10.1016/0921-5093(90)90033-Y