Articles citing this article

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Cited article:

The surface activation layer of GaAs negative electron affinity photocathode activated by Cs, Li, and NF3

Y. Sun, R. E. Kirby, T. Maruyama, et al.
Applied Physics Letters 95 (17) 174109 (2009)
https://doi.org/10.1063/1.3257730

Beam characterization of the Orsay He-afterflow polarized electron source

Samuel Cohen, Ouasilla Zerhouni, Jöel Arianer, Said Essabaa and Robert Frascaria
Journal of Physics D: Applied Physics 30 (3) 417 (1997)
https://doi.org/10.1088/0022-3727/30/3/014

New material for photoemission electron source: semiconductor alloy InGaAsP grown on GaAs substrate

V.L. Alperovich, Yu.B. Bolkhovityanov, A.G. Paulish and A.S. Terekhov
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 340 (3) 429 (1994)
https://doi.org/10.1016/0168-9002(94)90123-6

Operating experience with a GaAs photoemission electron source

F. C. Tang, M. S. Lubell, K. Rubin, et al.
Review of Scientific Instruments 57 (12) 3004 (1986)
https://doi.org/10.1063/1.1138982