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Cited article:

Cluster growth of Al on stepped and unstepped GaAs(110) at 300 K: A scanning-tunneling-microscopy examination

J. C. Patrin, Y. Z. Li and J. H. Weaver
Physical Review B 45 (4) 1756 (1992)
https://doi.org/10.1103/PhysRevB.45.1756

Electronic Structure of Metal-Semiconductor Contacts

K. Stiles, A. Kahn, D. G. Kidlay and G. Margaritondo
Perspectives in Condensed Matter Physics, Electronic Structure of Metal-Semiconductor Contacts 4 228 (1990)
https://doi.org/10.1007/978-94-009-0657-0_30

Temperature-dependent Al/GaAs(110) interface formation and adatom energy references

Steven G. Anderson, C. M. Aldao, G. D. Waddill, et al.
Physical Review B 40 (12) 8305 (1989)
https://doi.org/10.1103/PhysRevB.40.8305

Temperature effects for Ti/GaAs(110) interface formation involving cluster and atom deposition

C. M. Aldao, G. D. Waddill, S. G. Anderson and J. H. Weaver
Physical Review B 40 (5) 2932 (1989)
https://doi.org/10.1103/PhysRevB.40.2932

Chemical and electronic properties of the Ag/GaSb(110) interface formed at room and low temperature

D. Mao, A. Kahn and L. Soonckindt
Physical Review B 40 (8) 5579 (1989)
https://doi.org/10.1103/PhysRevB.40.5579

Surface Properties of Electronic Materials - The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis

C.B. DUKE
The Chemical Physics of Solid Surfaces, Surface Properties of Electronic Materials - The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis 5 69 (1988)
https://doi.org/10.1016/B978-0-444-42782-3.50008-X

Dependence of core-level photoemission spectra on overlayer growth mode: Al on InP(110)

A. B. McLean, I. T. McGovern, C. Stephens, et al.
Physical Review B 38 (9) 6330 (1988)
https://doi.org/10.1103/PhysRevB.38.6330

Temperature-dependent pinning at the Al/n-GaAs(110) interface

T. Kendelewicz, M. D. Williams, K. K. Chin, et al.
Applied Physics Letters 48 (14) 919 (1986)
https://doi.org/10.1063/1.96658