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Cited article:

THE APPLICATION OF LASER ANNEALING TO DOPANT PROFILING FOR SEMICONDUCTOR DEVICES

A.E. Adams, S.L. Morgan

J. Phys. Colloques, 44 C5 (1983) C5-433-C5-437

DOI: https://doi.org/10.1051/jphyscol:1983563

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This article has been cited by the following article(s):

Numerical simulation of the gas immersion laser doping (GILD) process in silicon

E. Landi, P.G. Carey and T.W. Sigmon
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 7 (2) 205 (1988)
https://doi.org/10.1109/43.3150