Articles citing this article

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Cited article:

Nonequilibrium luminescence at the E0+Δ0 gap in GaAs with Si-δ doping

N. Mestres, F. Cerdeira, F. Meseguer, et al.
Journal of Applied Physics 71 (11) 5619 (1992)
https://doi.org/10.1063/1.350492

Resonance Raman scattering in heavily-bulk-doped and ion-implanted laser-annealed n-type germanium

A. K. Sood, G. Contreras, and M. Cardona
Physical Review B 31 (6) 3760 (1985)
https://doi.org/10.1103/PhysRevB.31.3760

Raman scattering by intervalley carrier-density fluctuations in n-type Ge: Uniaxial stress and resonance effects

G. Contreras, A. Sood and M. Cardona
Physical Review B 32 (2) 930 (1985)
https://doi.org/10.1103/PhysRevB.32.930

Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs

Alain Chantre, and Daniel Bois
Physical Review B 31 (12) 7979 (1985)
https://doi.org/10.1103/PhysRevB.31.7979

Raman scattering by intervalley carrier-density fluctuations in n-type Si: Intervalley and intravalley mechanisms

G. Contreras, A. K. Sood, and M. Cardona
Physical Review B 32 (2) 924 (1985)
https://doi.org/10.1103/PhysRevB.32.924