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Cited article:

ON SOME ASPECTS OF THE MOBILITY OF DISLOCATIONS IN SLIGHTLY n-DOPED InSb SINGLE CRYSTALS

J. Di Persio, R. Kesteloot

J. Phys. Colloques, 44 C4 (1983) C4-469-C4-474

DOI: https://doi.org/10.1051/jphyscol:1983456

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This article has been cited by the following article(s):

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A TEMin situstudy of dislocation glide in a III-V compound (InSb)

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Transmission electron microscopy of semi-insulating Ga As deformed at room temperature and under confining pressure

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Journal de Physique Lettres 46 (21) 1023 (1985)
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