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Cited article:

Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0 0 0 1)

Karl K Sabelfeld, Vladimir M Kaganer, Carsten Pfüller and Oliver Brandt
Journal of Physics D: Applied Physics 50 (40) 405101 (2017)
https://doi.org/10.1088/1361-6463/aa85c8

Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor

C. Donolato
Journal of Applied Physics 84 (5) 2656 (1998)
https://doi.org/10.1063/1.368378

A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activity

C Donolato
Semiconductor Science and Technology 7 (1) 37 (1992)
https://doi.org/10.1088/0268-1242/7/1/007

A contribution to the theory of beam‐induced current characterization of dislocations

L. Pasemann
Journal of Applied Physics 69 (9) 6387 (1991)
https://doi.org/10.1063/1.348841