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Cited article:

DFT calculations of carrier-trapping effects on atomic structures of 30° partial dislocation cores in zincblende II-VI group zinc compounds

Sena Hoshino, Yu Oshima, Tatsuya Yokoi, Atsutomo Nakamura and Katsuyuki Matsunaga
Physical Review Materials 7 (1) (2023)
https://doi.org/10.1103/PhysRevMaterials.7.013603

Plastic behaviour of Cd x Hg1?x Te (0? x?1) crystals

J. F. Barbot, G. Rivaud, H. Garem, et al.
Journal of Materials Science 25 (3) 1877 (1990)
https://doi.org/10.1007/BF01045400

Properties of II–VI semiconductors associated with moving dislocations

Yu.A. Osip'yan, V.F. Petrenko, A.V. Zaretskiĭ and R.W. Whitworth
Advances in Physics 35 (2) 115 (1986)
https://doi.org/10.1080/00018738600101871

Cathodoluminescence and polarization studies from individual dislocations in diamond

N. Yamamoto, J. C. H. Spence and D. Fathy
Philosophical Magazine Part B 49 (6) 609 (1984)
https://doi.org/10.1080/13642818408227648

Two independent mechanisms of dynamical recovery in the high-temperature deformation of silicon and germanium

Hans Siethoff, Karl Ahlborn and Wolfgang Schröter
Philosophical Magazine A 50 (1) L1 (1984)
https://doi.org/10.1080/01418618408244206

Deep electron level calculations for dislocations in Si and Ge recursion approach exploiting the translational symmetry

H. Veth and H. Teichler
Philosophical Magazine Part B 49 (4) 371 (1984)
https://doi.org/10.1080/13642818408246525