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Cited article:
G. Rivaud , J.C. Desoyer
J. Phys. Colloques, 44 C4 (1983) C4-387-C4-394
This article has been cited by the following article(s):
8 articles
DFT calculations of carrier-trapping effects on atomic structures of 30° partial dislocation cores in zincblende II-VI group zinc compounds
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Plastic behaviour of Cd x Hg1?x Te (0? x?1) crystals
J. F. Barbot, G. Rivaud, H. Garem, et al. Journal of Materials Science 25 (3) 1877 (1990) https://doi.org/10.1007/BF01045400
Partial separations of extended α and β dislocations in II–VI semiconductors
G. Lu And and D. J. H. Cockayne Philosophical Magazine A 53 (3) 307 (1986) https://doi.org/10.1080/01418618608242833
Properties of II–VI semiconductors associated with moving dislocations
Yu.A. Osip'yan, V.F. Petrenko, A.V. Zaretskiĭ and R.W. Whitworth Advances in Physics 35 (2) 115 (1986) https://doi.org/10.1080/00018738600101871
Cathodoluminescence and polarization studies from individual dislocations in diamond
N. Yamamoto, J. C. H. Spence and D. Fathy Philosophical Magazine Part B 49 (6) 609 (1984) https://doi.org/10.1080/13642818408227648
Two independent mechanisms of dynamical recovery in the high-temperature deformation of silicon and germanium
Hans Siethoff, Karl Ahlborn and Wolfgang Schröter Philosophical Magazine A 50 (1) L1 (1984) https://doi.org/10.1080/01418618408244206
Deep electron level calculations for dislocations in Si and Ge recursion approach exploiting the translational symmetry
H. Veth and H. Teichler Philosophical Magazine Part B 49 (4) 371 (1984) https://doi.org/10.1080/13642818408246525
Dislocation core structures in α quartz derived from a valence force potential
M. Heggie and M. Nylén Philosophical Magazine Part B 50 (5) 543 (1984) https://doi.org/10.1080/13642818408238877