Articles citing this article

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Cited article:

Electron‐beam‐induced current and photoetching investigations of dislocations and impurity atmospheres inn‐type liquid‐encapsulated Czochralski GaAs

C. Frigeri and J. L. Weyher
Journal of Applied Physics 65 (12) 4646 (1989)
https://doi.org/10.1063/1.343239

Dislocation configurations in semi-insulating, n-type and p-type GaAs deformed at 150°C

Bruno C. De Cooman and C. Barry Carter
Philosophical Magazine A 60 (2) 245 (1989)
https://doi.org/10.1080/01418618908219283

Experimental evidence for creation of luminescence quenching localized defects by moving dislocations in gallium arsenide

T. W. James, J. B. James, V. B. Harper and H. Olsen
Journal of Applied Physics 64 (8) 3885 (1988)
https://doi.org/10.1063/1.341342

Formation of centers with deep levels in gaseous phase epitaxy of gallium arsenide

L. G. Lavrent'eva and M. D. Vilisova
Soviet Physics Journal 29 (5) 339 (1986)
https://doi.org/10.1007/BF00895287