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Cited article:
T. Figielski , T. Wosiski , A. Morawski
J. Phys. Colloques, 44 C4 (1983) C4-353-C4-357
This article has been cited by the following article(s):
8 articles
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Electron‐beam‐induced current and photoetching investigations of dislocations and impurity atmospheres inn‐type liquid‐encapsulated Czochralski GaAs
C. Frigeri and J. L. Weyher Journal of Applied Physics 65 (12) 4646 (1989) https://doi.org/10.1063/1.343239
Interrelation between hole trap and certain electron traps in gallium arsenide
Zhou Jicheng, Luo Yan, Lu Bingfang and Zhan Qianbao Materials Letters 7 (11) 391 (1989) https://doi.org/10.1016/0167-577X(89)90077-3
Dislocation configurations in semi-insulating, n-type and p-type GaAs deformed at 150°C
Bruno C. De Cooman and C. Barry Carter Philosophical Magazine A 60 (2) 245 (1989) https://doi.org/10.1080/01418618908219283
Experimental evidence for creation of luminescence quenching localized defects by moving dislocations in gallium arsenide
T. W. James, J. B. James, V. B. Harper and H. Olsen Journal of Applied Physics 64 (8) 3885 (1988) https://doi.org/10.1063/1.341342
Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics
A. George and J. Rabier Revue de Physique Appliquée 22 (9) 941 (1987) https://doi.org/10.1051/rphysap:01987002209094100
Electron paramagnetic resonance of plastically deformed semiconductors : a short review
A. Goltzené Revue de Physique Appliquée 22 (6) 469 (1987) https://doi.org/10.1051/rphysap:01987002206046900
Formation of centers with deep levels in gaseous phase epitaxy of gallium arsenide
L. G. Lavrent'eva and M. D. Vilisova Soviet Physics Journal 29 (5) 339 (1986) https://doi.org/10.1007/BF00895287