Articles citing this article

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Cited article:

Electronic states associated with dislocations in p-type silicon studied by means of electric-dipole spin resonance and deep-level transient spectroscopy

V. Kveder, T. Sekiguchi and K. Sumino
Physical Review B 51 (23) 16721 (1995)
https://doi.org/10.1103/PhysRevB.51.16721

Difference of the electrical properties of screw and 60° dislocations in silicon as detected with temperature-dependent electron beam induced current technique

Susumu Kusanagi, Takashi Sekiguchi and Koji Sumino
Applied Physics Letters 61 (7) 792 (1992)
https://doi.org/10.1063/1.107801

Electrical properties of dislocations and point defects in plastically deformed silicon

P. Omling, E. Weber, L. Montelius, H. Alexander and J. Michel
Physical Review B 32 (10) 6571 (1985)
https://doi.org/10.1103/PhysRevB.32.6571