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Cited article:
D.E. Aspnes
J. Phys. Colloques, 44 C10 (1983) C10-3-C10-12
This article has been cited by the following article(s):
7 articles
Optical in situ monitoring of MOVPE GaSb(100) film growth
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The effect of long-correlation-length surface roughness on the ellipsometric parameters of reflected light
I. L Morris and T. E Jenkins Europhysics Letters (EPL) 34 (1) 55 (1996) https://doi.org/10.1209/epl/i1996-00415-5
Phase modulated ellipsometry from the ultraviolet to the infrared: In situ application to the growth of semiconductors
B. Drévillon Progress in Crystal Growth and Characterization of Materials 27 (1) 1 (1993) https://doi.org/10.1016/0960-8974(93)90021-U
Automatic rotating element ellipsometers: Calibration, operation, and real‐time applications
R. W. Collins Review of Scientific Instruments 61 (8) 2029 (1990) https://doi.org/10.1063/1.1141417
Ellipsometry of rough silicon surfaces: comment on the 'roughness of heteroepitaxial silicon-on-sapphire'
C Pickering, R Greef and A M Hodge Semiconductor Science and Technology 4 (7) 574 (1989) https://doi.org/10.1088/0268-1242/4/7/014
Spectroscopic ellipsometry of ultrathin films: From UV to IR
B. Drevillon Thin Solid Films 163 157 (1988) https://doi.org/10.1016/0040-6090(88)90420-8
Optical characterization of low-index transparent thin films on transparent substrates by spectroscopic ellipsometry
Kenneth M. Gustin Applied Optics 26 (18) 3796 (1987) https://doi.org/10.1364/AO.26.003796