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Cited article:

High‐Performance Amorphous InGaZnO Thin‐Film Transistors via Staked Ultrathin High‐k TaOx Buffer Layer Grown on Low‐k SiO2 Gate Oxide

Tae Sung Kang, Kap Soo Yoon, Gwang Ho Baek, et al.
Advanced Electronic Materials 3 (3) (2017)
https://doi.org/10.1002/aelm.201600452

Analysis of electronic structure of amorphous InGaZnO/SiO2 interface by angle-resolved X-ray photoelectron spectroscopy

Y. Ueoka, Y. Ishikawa, N. Maejima, et al.
Journal of Applied Physics 114 (16) (2013)
https://doi.org/10.1063/1.4828869