PROBLEM RELATED TO THE MBE GROWTH AT HIGH SUBSTRATE TEM0PERATURE FORGaAs-Ga1-xAlxAs DOUBLE HETEROSTRUCTURE LASERS
J. Phys. Colloques, 43 C5 (1982) C5-483-C5-489
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Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxy
Bernard Jusserand, François Alexandre, Daniel Paquet and Guy Le RouxApplied Physics Letters 47 (3) 301 (1985)
https://doi.org/10.1063/1.96199