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Cited article:

CROISSANCE EPITAXIQUE D'ARSENIURE DE GALLIUM PAR DEPOT CHIMIQUE EN PHASE VAPEUR A PARTIR D'UN NOUVEAU COMPOSE ORGANOMETALLIQUE LE MONOCHLORODIMETHYLGALLIUM-TRIETHYLARSINE

A. Zaouk, G. Constant

J. Phys. Colloques, 43 C5 (1982) C5-421-C5-426

DOI: https://doi.org/10.1051/jphyscol:1982548

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Chemical Vapor Deposition of GaP and GaAs Thin Films From [nBu2Ga(μ-EtBu2)2GanBu2] (E = P or As) and Ga(PtBu2)3

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