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Cited article:
N. Vodjdani , A. Lemarchand , H. Paradan
J. Phys. Colloques, 43 C5 (1982) C5-339-C5-349
This article has been cited by the following article(s):
8 articles
Field effect enhancement in buffered quantum nanowire networks
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Characterization of Ill-V heterostructures grown by selective-area epitaxy using double-crystal X-ray diffractometry with high lateral resolution
A Iberl, H Gobel and H Heinecke Journal of Physics D: Applied Physics 28 (4A) A172 (1995) https://doi.org/10.1088/0022-3727/28/4A/034
Micro-focus double-crystal X-ray diffractometry on IIl-V heterostructures grown by selective-area epitaxy
A Iberl, M Schuster, H Gobel, et al. Journal of Physics D: Applied Physics 28 (4A) A200 (1995) https://doi.org/10.1088/0022-3727/28/4A/039
Chemical beam epitaxy — a child of surface science
Hans Lüth Surface Science 299-300 867 (1994) https://doi.org/10.1016/0039-6028(94)90703-X
III-V crystal growth of novel layered structures using metalorganic molecular beam epitaxy
H Heinecke Physica Scripta T49B 742 (1993) https://doi.org/10.1088/0031-8949/1993/T49B/062
Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5P
P Maurel, Ph Bove, J C Garcia and C Grattepain Semiconductor Science and Technology 6 (4) 254 (1991) https://doi.org/10.1088/0268-1242/6/4/005
MOMBE growth of high-quality InP and GaInAs bulk, heterojunction and quantum well layers
P Maurel, P Bove, J C Garcia and M Razeghi Semiconductor Science and Technology 5 (6) 638 (1990) https://doi.org/10.1088/0268-1242/5/6/034
Growth of microstructures by molecular beam epitaxy
A. Gossard IEEE Journal of Quantum Electronics 22 (9) 1649 (1986) https://doi.org/10.1109/JQE.1986.1073165