Articles citing this article

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Cited article:

Characterization of Ill-V heterostructures grown by selective-area epitaxy using double-crystal X-ray diffractometry with high lateral resolution

A Iberl, H Gobel and H Heinecke
Journal of Physics D: Applied Physics 28 (4A) A172 (1995)
https://doi.org/10.1088/0022-3727/28/4A/034

Micro-focus double-crystal X-ray diffractometry on IIl-V heterostructures grown by selective-area epitaxy

A Iberl, M Schuster, H Gobel, et al.
Journal of Physics D: Applied Physics 28 (4A) A200 (1995)
https://doi.org/10.1088/0022-3727/28/4A/039

Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5P

P Maurel, Ph Bove, J C Garcia and C Grattepain
Semiconductor Science and Technology 6 (4) 254 (1991)
https://doi.org/10.1088/0268-1242/6/4/005

MOMBE growth of high-quality InP and GaInAs bulk, heterojunction and quantum well layers

P Maurel, P Bove, J C Garcia and M Razeghi
Semiconductor Science and Technology 5 (6) 638 (1990)
https://doi.org/10.1088/0268-1242/5/6/034