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Cited article:

GaAs METAL ORGANICS VAPOUR PHASE EPITAXY : RESIDUAL CARBON

B. el Jani, M. Leroux, J.C. Grenet, P. Gibart

J. Phys. Colloques, 43 C5 (1982) C5-303-C5-310

DOI: https://doi.org/10.1051/jphyscol:1982535

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This article has been cited by the following article(s):

Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy

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Applied Physics Letters 52 (20) 1704 (1988)
https://doi.org/10.1063/1.99023

Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition

J. van de Ven, H. G. Schoot and L. J. Giling
Journal of Applied Physics 60 (5) 1648 (1986)
https://doi.org/10.1063/1.337254

Residual impurities in MO-VPE GaAs epitaxial layers

B. El Jani, J.C. Grenet, M. Leroux, et al.
Revue de Physique Appliquée 19 (1) 7 (1984)
https://doi.org/10.1051/rphysap:019840019010700