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Cited article:

THE EFFECT OF ARSENIC SPECIES ON THE MINORITY CARRIER PROPERTIES OF (AlGa)As-GaAs DOUBLE HETEROSTRUCTURES GROWN BY MBE

G. Duggan, P. Dawson, C.T. Foxon, G.W. 't Hooft

J. Phys. Colloques, 43 C5 (1982) C5-129-C5-134

DOI: https://doi.org/10.1051/jphyscol:1982516

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This article has been cited by the following article(s):

Optical characterization of AlxGa1−xAs/GaAs modulation-doped heterostructures grown under As2 and As4 fluxes

D. Vázquez-Cortés, C. Soubervielle-Montalvo, V. H. Méndez-García, L. Zamora-Peredo and S. Jiménez-Sandoval
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28 (3) C3I13 (2010)
https://doi.org/10.1116/1.3374325

Comparison of As species (As4and As2) in molecular beam epitaxial growth of AlxGa1−xAs (x=0.2–0.7) on (100) GaAs

T. Hayakawa, M. Morishima, M. Nagai, H. Horie and K. Matsumoto
Applied Physics Letters 59 (19) 2415 (1991)
https://doi.org/10.1063/1.106033

Reduced carbon acceptor incorporation in GaAs grown by molecular beam epitaxy using dimer arsenic

J. C. Garcia, A. C. Beye, J. P. Contour, et al.
Applied Physics Letters 52 (19) 1596 (1988)
https://doi.org/10.1063/1.99092