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Cited article:

Nanoscale Gallium Phosphide Epilayers on Sapphire for Low-Loss Visible Nanophotonics

Vladimir V. Fedorov, Olga Yu. Koval, Daniil R. Ryabov, et al.
ACS Applied Nano Materials 5 (7) 8846 (2022)
https://doi.org/10.1021/acsanm.2c00941

Room Temperature Cyclopentadiene Elimination Reaction for the Synthesis of Diethylgallium−Amides, −Phosphides, and −Thiolates. Crystal and Molecular Structures of [Et2GaP(t-Bu)2]2 and [Et2GaS(SiPh3)]2

O. T. Beachley,, Daniel B. Rosenblum, Melvyn Rowen Churchill, Charles H. Lake and Laurence M. Toomey
Organometallics 15 (17) 3653 (1996)
https://doi.org/10.1021/om960284p

Ultra-high vacuum metalorganic chemical vapor deposition of GaAs thin films onto Si(100) using a single-source precursor

Jiong-Ping Lu, Rishi Raj and Alex Wernberg
Thin Solid Films 205 (2) 236 (1991)
https://doi.org/10.1016/0040-6090(91)90307-J

Niedermolekulare III/V‐Komplexe, ein möglicher neuer Weg zu Galliumarsenid und verwandten Halbleitern

Alan H. Cowley and Richard A. Jones
Angewandte Chemie 101 (9) 1235 (1989)
https://doi.org/10.1002/ange.19891010908

Single‐Source III/V Precursors: A New Approach to Gallium Arsenide and Related Semiconductors

Alan H. Cowley and Richard A. Jones
Angewandte Chemie International Edition in English 28 (9) 1208 (1989)
https://doi.org/10.1002/anie.198912081

Comportement à deux modes de Ga(x)In(1 - x)P ? Diffusion Raman résonnante par les modes rendus actifs par le désordre

E. Bedel, R. Carles, G. Landa and J.B. Renucci
Revue de Physique Appliquée 19 (1) 17 (1984)
https://doi.org/10.1051/rphysap:0198400190101700