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Cited article:
D. Turnbull
J. Phys. Colloques, 43 C1 (1982) C1-259-C1-269
This article has been cited by the following article(s):
6 articles
Experimental test of kinetic theories for heterogeneous freezing in silicon
P. A. Stolk, A. Polman and W. C. Sinke Physical Review B 47 (1) 5 (1993) https://doi.org/10.1103/PhysRevB.47.5
Kinetics of solid phase crystallization in amorphous silicon
G.L. Olson and J.A. Roth Materials Science Reports 3 (1) 1 (1988) https://doi.org/10.1016/S0920-2307(88)80005-7
Grain‐boundary space‐charge conduction
Herbert F. Mataré Journal of Applied Physics 59 (1) 97 (1986) https://doi.org/10.1063/1.336846
Kinetic many-body model of recrystallization of pure and doped amorphous silicon
Yu. Khait and R. Beserman Physical Review B 33 (4) 2983 (1986) https://doi.org/10.1103/PhysRevB.33.2983
Asymmetric Melting and Freezing Kinetics in Silicon
Jeff Y. Tsao, Michael J. Aziz, Michael O. Thompson and Paul S. Peercy Physical Review Letters 56 (25) 2712 (1986) https://doi.org/10.1103/PhysRevLett.56.2712
Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation
E. P. Donovan, F. Spaepen, D. Turnbull, J. M. Poate and D. C. Jacobson Journal of Applied Physics 57 (6) 1795 (1985) https://doi.org/10.1063/1.334406