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Cited article:
H. Richter , L. Ley
J. Phys. Colloques, 43 C1 (1982) C1-247-C1-251
This article has been cited by the following article(s):
6 articles
Monitoring of the growth of microcrystalline silicon by plasma‐enhanced chemical vapor deposition using in‐situ Raman spectroscopy
S. Muthmann, F. Köhler, M. Meier, et al. physica status solidi (RRL) – Rapid Research Letters 5 (4) 144 (2011) https://doi.org/10.1002/pssr.201105041
Microcrystalline Silicon Thin-Films Grown by Plasma Enhanced Chemical Vapour Deposition - Growth Mechanisms and Grain Size Control
Pere Roca i Cabarrocas, Anna Fontcuberta i Morral, Billel Kalache and Samir Kasouit Solid State Phenomena 93 257 (2003) https://doi.org/10.4028/www.scientific.net/SSP.93.257
Ion beam deposition of crystallographically aligned nano-crystalline silicon films
H.R. Khan and H. Frey Surface and Coatings Technology 81 (2-3) 307 (1996) https://doi.org/10.1016/0257-8972(95)02490-5
In situ spectroellipsometry study of the nucleation and growth of microcrystalline silicon
M. Fang and B. Drévillon Journal of Applied Physics 70 (9) 4894 (1991) https://doi.org/10.1063/1.349033
Insituspectroscopic ellipsometry investigation of the nucleation of microcrystalline silicon
B. Drevillon, C. Godet and Satyendra Kumar Applied Physics Letters 50 (23) 1651 (1987) https://doi.org/10.1063/1.97757
Characterization of microcrystallinity in hydrogenated silicon thin films
C. Godet, B. Marchon and M.P. Schmidt Thin Solid Films 155 (2) 227 (1987) https://doi.org/10.1016/0040-6090(87)90068-X