INFLUENCE DE LA STRUCTURE ET DE LA SEGREGATION AUX JOINTS DE GRAINS SUR LES PROPRIETES ELECTRIQUES ET LE RENDEMENT PHOTOVOLTAIQUE DU SILICIUM POLYCRISTALLIN
J. Phys. Colloques, 43 C1 (1982) C1-207-C1-212
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Fast diffusers Cu and Ni as the origin of electrical activity in a silicon grain boundary
J.-L. Maurice and C. ColliexApplied Physics Letters 55 (3) 241 (1989)
https://doi.org/10.1063/1.101919
Electrical activity of the first‐ and second‐order twins and grain boundaries in silicon
A. Bary and G. NouetJournal of Applied Physics 63 (2) 435 (1988)
https://doi.org/10.1063/1.340259
Impurity-induced microstructure of grain boundaries in cast silicon. Incidence on electrical properties
J.Y. Laval, J.L. Maurice and C. CabanelRevue de Physique Appliquée 22 (7) 623 (1987)
https://doi.org/10.1051/rphysap:01987002207062300
Grain boundaries in semiconductors
C R M GrovenorJournal of Physics C: Solid State Physics 18 (21) 4079 (1985)
https://doi.org/10.1088/0022-3719/18/21/008