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Cited article:
L.L. Kazmerski , P.E. Russell
J. Phys. Colloques, 43 C1 (1982) C1-171-C1-185
This article has been cited by the following article(s):
9 articles
Electrical activity and microstructure of a faceted (1―11)-(11―2), Σ = 3 twin boundary in aluminium-doped silicon
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Fast diffusers Cu and Ni as the origin of electrical activity in a silicon grain boundary
J.‐L. Maurice and C. Colliex Applied Physics Letters 55 (3) 241 (1989) https://doi.org/10.1063/1.101919
Polycrystalline Semiconductors
S. Pizzini, F. Borsani, A. Sandrinelli, et al. Springer Proceedings in Physics, Polycrystalline Semiconductors 35 115 (1989) https://doi.org/10.1007/978-3-642-93413-1_15
Infrared investigation of the presence of Fe in B‐doped polycrystalline silicon
A. Borghesi, M. Geddo, A. Stella and Chen Chen‐Jia Journal of Applied Physics 63 (8) 2864 (1988) https://doi.org/10.1063/1.340942
Les propriétés électriques de la macle Σ = 25 du silicium et leur évolution en fonction de traitements de recuit
A. Broniatowski Revue de Physique Appliquée 22 (7) 585 (1987) https://doi.org/10.1051/rphysap:01987002207058500
Origine structurale et chimique de l'activité électrique des joints de grains dans le silicium
A. Rocher Revue de Physique Appliquée 22 (7) 591 (1987) https://doi.org/10.1051/rphysap:01987002207059100
Grain‐boundary space‐charge conduction
Herbert F. Mataré Journal of Applied Physics 59 (1) 97 (1986) https://doi.org/10.1063/1.336846
Effects of heat treatment on the composition and semiconductivity of electrochemically deposited CdTe films
Makoto Takahashi, Kohei Uosaki, Hideaki Kita and Yoshikazu Suzuki Journal of Applied Physics 58 (11) 4292 (1985) https://doi.org/10.1063/1.335514
Passivation of intragrain defects by copper diffusion in p-type polycrystalline silicon
M. Zehaf, G. Mathian, C.M. Singal and S. Martinuzzi Revue de Physique Appliquée 18 (9) 557 (1983) https://doi.org/10.1051/rphysap:01983001809055700