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Cited article:
C.H. Seager , D.J. Sharp , J.K.G. Panitz , J.I. Hanoka
J. Phys. Colloques, 43 C1 (1982) C1-103-C1-116
This article has been cited by the following article(s):
9 articles
Material characterization with a simple laser scanning microscope
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Shunsuke Muto, Seiji Takeda, Mitsuji Hirata and Tetsuo Tanabe Journal of Applied Physics 70 (7) 3505 (1991) https://doi.org/10.1063/1.349243
Hydrogen plasma induced defects in silicon
S. J. Jeng, G. S. Oehrlein and G. J. Scilla Applied Physics Letters 53 (18) 1735 (1988) https://doi.org/10.1063/1.99810
Impurity-defect interaction in polycrystalline silicon for photovoltaic applications. The role of hydrogen
A. Chari, P. de Mierry, A. Menikh and M. Aucouturier Revue de Physique Appliquée 22 (7) 655 (1987) https://doi.org/10.1051/rphysap:01987002207065500
Influence and passivation of extended crystallographic defects in polycrystalline silicon
S. Martinuzzi Revue de Physique Appliquée 22 (7) 637 (1987) https://doi.org/10.1051/rphysap:01987002207063700
Grain‐boundary space‐charge conduction
Herbert F. Mataré Journal of Applied Physics 59 (1) 97 (1986) https://doi.org/10.1063/1.336846
Hydrogenation of gold‐related levels in silicon by electrolytic doping
S. J. Pearton, W. L. Hansen, E. E. Haller and J. M. Kahn Journal of Applied Physics 55 (4) 1221 (1984) https://doi.org/10.1063/1.333167
Passivation par l'hydrogène de défauts recombinants dans les photopiles réalisées sur rubans de silicium polycristallin RAD
M. Mautref, C. Lacroix, C. Belouet, et al. Revue de Physique Appliquée 19 (4) 333 (1984) https://doi.org/10.1051/rphysap:01984001904033300
Passivation of intragrain defects by copper diffusion in p-type polycrystalline silicon
M. Zehaf, G. Mathian, C.M. Singal and S. Martinuzzi Revue de Physique Appliquée 18 (9) 557 (1983) https://doi.org/10.1051/rphysap:01983001809055700