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Cited article:

Structural characterization of nanostructures grown by Ni metal induced lateral crystallization of amorphous-Si

G. Z. Radnóczi, E. Dodony, G. Battistig, et al.
Journal of Applied Physics 119 (6) (2016)
https://doi.org/10.1063/1.4941349

Oxide precipitation at silicon grain boundaries

E. Schroer, S. Hopfe, P. Werner, et al.
Applied Physics Letters 70 (3) 327 (1997)
https://doi.org/10.1063/1.118405

Growth morphology of low-pressure metalorganic chemical vapor deposition silicon carbide on substrates

J. Rodríguez-Viejo, J. Stoemenos, N. Clavaguera and M.T. Clavaguera-Mora
Journal of Crystal Growth 155 (3-4) 214 (1995)
https://doi.org/10.1016/0022-0248(95)00196-4

Mode of growth and microstructure of polycrystalline silicon obtained by solid‐phase crystallization of an amorphous silicon film

L. Haji, P. Joubert, J. Stoemenos and N. A. Economou
Journal of Applied Physics 75 (8) 3944 (1994)
https://doi.org/10.1063/1.356014

Investigation of the electronic structure of the Sigma 5(210) grain boundary in silicon by the linear muffin-tin orbitals/tight-binding method

A V Nikolaeva, A V Artemyev, Yu H Vekilov, L K Fionova and M B Samsonova
Journal of Physics: Condensed Matter 4 (11) 2775 (1992)
https://doi.org/10.1088/0953-8984/4/11/007

A particular case of electronic behaviour of the Sigma =3 grain boundary in p-type Si

D S Kyriakos, A N Anagnostopoulos, Ph Komninou and B Ploss
Semiconductor Science and Technology 6 (7) 607 (1991)
https://doi.org/10.1088/0268-1242/6/7/007