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Cited article:

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

Y. Sun and N. Balkan
Journal of Applied Physics 106 (7) (2009)
https://doi.org/10.1063/1.3225997

Inhibition of negative differential resistance in modulation-dopedn-typeGaxIn1−xNyAs1−y∕GaAsquantum wells

Y. Sun, M. P. Vaughan, A. Agarwal, et al.
Physical Review B 75 (20) (2007)
https://doi.org/10.1103/PhysRevB.75.205316

Energy and momentum relaxation of hot electrons in GaAs/AlxGa1-xAs quantum wells: effect of hot phonon lifetime

E Ozturk, A Straw, N Balkan, et al.
Semiconductor Science and Technology 7 (11) 1417 (1992)
https://doi.org/10.1088/0268-1242/7/11/022

Energy and momentum relaxation of electrons in GaAs/GaAlAs HEMT structures

N Balkan, R Gupta, Z Ciechanowska, et al.
Semiconductor Science and Technology 6 (3) 175 (1991)
https://doi.org/10.1088/0268-1242/6/3/006

Escape from quantum wells via polar optical phonon scattering

Lie Liang and Craig S. Lent
Journal of Applied Physics 68 (4) 1741 (1990)
https://doi.org/10.1063/1.346603

Quantum reflections and inelastic scattering of electrons in semiconductor heterostructures

J. Müller, A. Levi and S. Schmitt-Rink
Physical Review B 38 (14) 9843 (1988)
https://doi.org/10.1103/PhysRevB.38.9843