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Cited article:
K. Hess
J. Phys. Colloques, 42 C7 (1981) C7-3-C7-17
This article has been cited by the following article(s):
7 articles
Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells
Y. Sun and N. Balkan Journal of Applied Physics 106 (7) (2009) https://doi.org/10.1063/1.3225997
Inhibition of negative differential resistance in modulation-dopedn-typeGaxIn1−xNyAs1−y∕GaAsquantum wells
Y. Sun, M. P. Vaughan, A. Agarwal, et al. Physical Review B 75 (20) (2007) https://doi.org/10.1103/PhysRevB.75.205316
Intersubband relaxation in modulation-doped multiple-quantum-well structures
J. L. Educato and J. P. Leburton Physical Review B 49 (3) 2177 (1994) https://doi.org/10.1103/PhysRevB.49.2177
Energy and momentum relaxation of hot electrons in GaAs/AlxGa1-xAs quantum wells: effect of hot phonon lifetime
E Ozturk, A Straw, N Balkan, et al. Semiconductor Science and Technology 7 (11) 1417 (1992) https://doi.org/10.1088/0268-1242/7/11/022
Energy and momentum relaxation of electrons in GaAs/GaAlAs HEMT structures
N Balkan, R Gupta, Z Ciechanowska, et al. Semiconductor Science and Technology 6 (3) 175 (1991) https://doi.org/10.1088/0268-1242/6/3/006
Escape from quantum wells via polar optical phonon scattering
Lie Liang and Craig S. Lent Journal of Applied Physics 68 (4) 1741 (1990) https://doi.org/10.1063/1.346603
Quantum reflections and inelastic scattering of electrons in semiconductor heterostructures
J. Müller, A. Levi and S. Schmitt-Rink Physical Review B 38 (14) 9843 (1988) https://doi.org/10.1103/PhysRevB.38.9843