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Cited article:
P. Viktorovitch , G. Moddel , J. Blake , S. Oguz , R.L. Weisfield , W. Paul
J. Phys. Colloques, 42 C4 (1981) C4-455-C4-458
This article has been cited by the following article(s):
5 articles
Baojie Yan, Guozhen Yue, Laura Sivec, Chun-Sheng Jiang, Yanfa Yan, Kirstin Alberi, Jeffrey Yang and Subhendu Guha 003755 (2010) https://doi.org/10.1109/PVSC.2010.5616075
In situ ellipsometry comparison of the nucleation and growth of sputtered and glow-discharge a-Si:H
R. W. Collins and J. M. Cavese Journal of Applied Physics 62 (10) 4146 (1987) https://doi.org/10.1063/1.339132
Temperature dependent light induced conductivity changes in hydrogenated amorphous silicon
Jin Jang and Choochon Lee Journal of Applied Physics 54 (7) 3943 (1983) https://doi.org/10.1063/1.332570
Model for the temperature dependence of photoluminescence ina-Si:H and related materials
R. W. Collins and William Paul Physical Review B 25 (8) 5257 (1982) https://doi.org/10.1103/PhysRevB.25.5257
Optical absorption, photoconductivity, and photoluminescence of glow-discharge amorphousSi1−xGexalloys
B. von Roedern, D. K. Paul, J. Blake, et al. Physical Review B 25 (12) 7678 (1982) https://doi.org/10.1103/PhysRevB.25.7678