The Citing articles tool gives a list of articles citing the current article. The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program . You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
H. Schade , J.I. Pankove
J. Phys. Colloques, 42 C4 (1981) C4-327-C4-330
This article has been cited by the following article(s):
13 articles
Metal–Insulator–Semiconductor Nanowire Network Solar Cells
Sebastian Z. Oener, Jorik van de Groep, Bart Macco, et al. Nano Letters 16 (6) 3689 (2016) https://doi.org/10.1021/acs.nanolett.6b00949
Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering
Bénédicte Demaurex, Stefaan De Wolf, Antoine Descoeudres, Zachary Charles Holman and Christophe Ballif Applied Physics Letters 101 (17) (2012) https://doi.org/10.1063/1.4764529
Electron beam creation of metastable defects in hydrogenated amorphous silicon: hydrogen collision model
Arthur Yelon, Hellmut Fritzsche and Howard M Branz Journal of Non-Crystalline Solids 266-269 437 (2000) https://doi.org/10.1016/S0022-3093(99)00772-3
Defect creation by 10‐keV electron irradiation in phosphorous‐dopeda‐Si:H
Suvarna Babras, V. G. Bhide, N. R. Rajopadhye and S. V. Bhoraskar Journal of Applied Physics 67 (6) 2800 (1990) https://doi.org/10.1063/1.345446
Pantelides responds
Sokrates Pantelides Physical Review Letters 58 (26) 2825 (1987) https://doi.org/10.1103/PhysRevLett.58.2825
Metastable defects in hydrogenated amorphous silicon
Richard Crandall Physical Review B 36 (5) 2645 (1987) https://doi.org/10.1103/PhysRevB.36.2645
Defect dynamics and the Staebler-Wronski effect in hydrogenated amorphous silicon
Sokrates T. Pantelides Physical Review B 36 (6) 3479 (1987) https://doi.org/10.1103/PhysRevB.36.3479
Electrical conductivity of electron-irradiated hydrogenated amorphous silicon
B. G. Yacobi and B. von Roedern Journal of Applied Physics 59 (7) 2590 (1986) https://doi.org/10.1063/1.337009
Decay of the electron-beam-induced current in hydrogenated amorphous silicon devices
B. G. Yacobi, C. R. Herrington and R. J. Matson Journal of Applied Physics 56 (2) 557 (1984) https://doi.org/10.1063/1.333947
Electron-beam-induced information storage in hydrogenated amorphous silicon devices
B. G. Yacobi Applied Physics Letters 44 (7) 695 (1984) https://doi.org/10.1063/1.94881
Limitations to the application of the electron-beam-induced current in hydrogen-passivated silicon grain boundaries
B. G. Yacobi, R. J. Matson, C. R. Herrington and Y. S. Tsuo Journal of Applied Physics 56 (10) 3011 (1984) https://doi.org/10.1063/1.333777
Reactive sputtering of amorphous silicon in Ne, Ar, and Kr
R. C. Ross and R. Messier Journal of Applied Physics 54 (10) 5744 (1983) https://doi.org/10.1063/1.331797
Spin-dependent photoconductivity in undoped a-Si: H
R. A. Street Philosophical Magazine B 46 (3) 273 (1982) https://doi.org/10.1080/13642818208246439