Articles citing this article

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Cited article:

Gap-states distribution of ion-implanted Si and GaAs from subgap absorption measurements

U. Zammit, M. Marinelli, R. Pizzoferrato and F. Mercuri
Physical Review B 46 (12) 7515 (1992)
https://doi.org/10.1103/PhysRevB.46.7515

Photoinduced change in the density of localized states near the conduction band of dopeda-Si:H

J. Takada and H. Fritzsche
Physical Review B 36 (3) 1706 (1987)
https://doi.org/10.1103/PhysRevB.36.1706

Some properties of hydrogenated amorphous silicon produced by direct reaction of silicon and hydrogen atoms

R. E. Viturro and K. Weiser
Philosophical Magazine B 53 (2) 93 (1986)
https://doi.org/10.1080/13642818608238977

Determination of low absorption coefficients from absorptance measurements on thin films

K. Driss-Khodja, A. Gheorghiu and M.-L. Theye
Optics Communications 55 (3) 169 (1985)
https://doi.org/10.1016/0030-4018(85)90040-9

Kinetics of the metastable optically induced ESR ina-Si:H

Charles Lee, W. D. Ohlsen, P. C. Taylor, H. S. Ullal and G. P. Ceasar
Physical Review B 31 (1) 100 (1985)
https://doi.org/10.1103/PhysRevB.31.100

Role of dangling-bond defects in early recombination in hydrogenated amorphous silicon

Douglas R. Wake and Nabil M. Amer
Physical Review B 27 (4) 2598 (1983)
https://doi.org/10.1103/PhysRevB.27.2598