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Cited article:

Different recrystallization patterns of Si+ implanted GaAs

I. D. Desnica-Franković
Journal of Applied Physics 85 (11) 7587 (1999)
https://doi.org/10.1063/1.370559

Morphology of the implantation-induced disorder in GaAs studied by Raman spectroscopyand ion channeling

U. V. Desnica, I. D. Desnica-Frankovic-acute, M. Ivanda, K. Furic-acute and T. E. Haynes
Physical Review B 55 (24) 16205 (1997)
https://doi.org/10.1103/PhysRevB.55.16205

Preparation, structure, dynamics, and energetics of amorphous silicon: A molecular-dynamics study

W. Luedtke and Uzi Landman
Physical Review B 40 (2) 1164 (1989)
https://doi.org/10.1103/PhysRevB.40.1164

Experimental determination of the nanocrystalline volume fraction in silicon thin films from Raman spectroscopy

E. Bustarret, M. A. Hachicha and M. Brunel
Applied Physics Letters 52 (20) 1675 (1988)
https://doi.org/10.1063/1.99054

Ab initio calculations on (SiH3)2F+: stability in the gas phase and model for bridging fluorine atom in ion-implanted amorphous silicon

Edgar W. Ignacio, H.Bernhard Schlegel and Jozef Bicerano
Chemical Physics Letters 127 (4) 367 (1986)
https://doi.org/10.1016/0009-2614(86)80297-4

An ellipsometry study of a hydrogenated amorphous silicon based n-i structure

R. W. Collins, A. H. Clark, S. Guha and C.-Y. Huang
Journal of Applied Physics 57 (10) 4566 (1985)
https://doi.org/10.1063/1.335361