PROPERTIES OF MICROCRYSTALLINE P-DOPED GLOW DISCHARGE Si:H FILMS
J. Phys. Colloques, 42 C4 (1981) C4-265-C4-268
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
A simple modification of the magnetron sputtering method for the deposition of boron-doped hydrogenated microcrystalline silicon films with enhanced doping efficiency
S.N Sharma, Debabrata Das and Ratnabali BanerjeeThin Solid Films 298 (1-2) 200 (1997)
https://doi.org/10.1016/S0040-6090(96)09325-X
Preparation of ultrathin microcrystalline silicon layers by atomic hydrogen etching of amorphous silicon and end-point detection by real time spectroellipsometry
H. V. Nguyen, Ilsin An, R. W. Collins, et al.Applied Physics Letters 65 (26) 3335 (1994)
https://doi.org/10.1063/1.113024
Role of hydrogen dilution and diborane doping on the growth mechanism ofp‐type microcrystalline silicon films prepared by photochemical vapor deposition
Sukriti Ghosh, Abhijit De, Swati Ray and A. K. BaruaJournal of Applied Physics 71 (10) 5205 (1992)
https://doi.org/10.1063/1.350576
¼c Silicon Thin Films Deposited by Remote Plasma Enhanced Chemical Vapor Deposition Process
C. Wang, G. N. Parsons, S. S. Kim, et al.MRS Proceedings 192 (1990)
https://doi.org/10.1557/PROC-192-535
Comparison of the properties of hydrogenated microcrystalline silicon films deposited by photo–chemical‐vapor deposition and glow‐discharge deposition processes
Joydeep Dutta, A. L. Unaogu, Swati Ray and A. K. BaruaJournal of Applied Physics 66 (10) 4709 (1989)
https://doi.org/10.1063/1.343829
Raman scattering studies in glow discharge deposited a-Si:H films: Effect of argon dilution
S.T. Kshirsagar, N.R. Khaladkar, J.B. Mamdapurkar and A.P.B. SinhaMaterials Chemistry and Physics 16 (5-6) 433 (1987)
https://doi.org/10.1016/0254-0584(87)90063-0
Glow-discharge amorphous silicon: Growth process and structure
Kazunobu Tanaka and Akihisa MatsudaMaterials Science Reports 2 (4) 139 (1987)
https://doi.org/10.1016/S0920-2307(87)80003-8
Electrical properties and ESR of undoped microcrystalline Si with a preferential orientation
S. Hasegawa, K. Kishi and Y. KurataPhilosophical Magazine B 52 (2) 199 (1985)
https://doi.org/10.1080/01418638508244282
The dynamics of photoexcited carriers in microcrystalline silicon
Shuji Komuro, Yoshinobu Aoyagi, Yusaburo Segawa, et al.Journal of Applied Physics 56 (6) 1658 (1984)
https://doi.org/10.1063/1.334154
ESR and electrical properties of P-doped microcrystalline Si
S. Hasegawa, S. Narikawa and Y. KurataPhilosophical Magazine B 48 (5) 431 (1983)
https://doi.org/10.1080/13642818308228569