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Cited article:

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Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation

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Properties of the exotic metastable ST12 germanium allotrope

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https://doi.org/10.1038/ncomms13909

Thermal stability of simple tetragonal and hexagonal diamond germanium

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Journal of Applied Physics 122 (17) (2017)
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Pressure-Induced Amorphization and a New High Density Amorphous Metallic Phase in Matrix-Free Ge Nanoparticles

Niccolo R. C. Corsini, Yuanpeng Zhang, William R. Little, et al.
Nano Letters 15 (11) 7334 (2015)
https://doi.org/10.1021/acs.nanolett.5b02627

Defects in Semiconductors

Mangalampalli S.R.N. Kiran, Bianca Haberl, Jodie E. Bradby and James S. Williams
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https://doi.org/10.1016/bs.semsem.2014.12.002

Phase transformation pathways in amorphous germanium under indentation pressure

S. Deshmukh, B. Haberl, S. Ruffell, et al.
Journal of Applied Physics 115 (15) (2014)
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Dense SixGe1–x (0 < x < 1) Materials Landscape Using Extreme Conditions and Precession Electron Diffraction

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The effect of composition on pressure-induced devitrification in metallic glasses

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Influence of loading holding time under quasistatic indentation on electrical properties and phase transformations of silicon

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Contact resistance and phase transformations during nanoindentation of silicon

A. B. Mann, D. van Heerden, J. B. Pethica, P. Bowes and T. P. Weihs
Philosophical Magazine A 82 (10) 1921 (2002)
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Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials

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Ternary Compounds, Organic Semiconductors

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Pressure-induced phase transition of crystalline and amorphous silicon and germanium at low temperatures

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The pressure dependence of the photoluminescence intensity in hydrogenated amorphous silicon

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