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Cited article:
Y. Hamakawa
J. Phys. Colloques, 42 C4 (1981) C4-1131-C4-1142
This article has been cited by the following article(s):
5 articles
Physics of Disordered Materials
Norbert J. Kreidl Physics of Disordered Materials 753 (1985) https://doi.org/10.1007/978-1-4613-2513-0_61
Transport properties of hydrogenated and chlorinated amorphous silicon Correlation with infrared transmission spectra
S. Al Dallal, S. Kalem, J. Bourneix, J. Chevallier and M. Toulemonde Philosophical Magazine B 50 (4) 493 (1984) https://doi.org/10.1080/13642818408238873
Carrier collection efficiency of Schottky diodes on triode dc sputtered hydrogenated amorphous silicon: Transport properties of holes
E. Arene, J. Baixeras and D. Mencaraglia Journal of Applied Physics 56 (10) 2806 (1984) https://doi.org/10.1063/1.333814
Origin of the open-circuit voltage in amorphous silicon Schottky-barrier solar cells
K. L. Narasimhan and V. Premachandran Journal of Applied Physics 56 (7) 2177 (1984) https://doi.org/10.1063/1.334221
The electrical performance of thinn +-window layers ina-Si: H solar cells
G. M�ller, G. M�ck, M. Simon and G. Winterling Applied Physics A Solids and Surfaces 29 (2) 63 (1982) https://doi.org/10.1007/BF00632427