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Cited article:

Solid-State Electrocatalysis in Heteroatom-Doped Alloy Anode Enables Ultrafast Charge Lithium-Ion Batteries

En Zhou, Hongchang Jin, Haifeng Lv, Yuansen Xie, Yuhao Lu, Ying-Rui Lu, Ting-Shan Chan, Chao Wang, Wensheng Yan, Jing Zhang, Hengxing Ji, Xiaojun Wu and Xiangfeng Duan
Journal of the American Chemical Society 146 (30) 20700 (2024)
https://doi.org/10.1021/jacs.4c03680

Fundamental reliability of 1.5-nm-thick silicon oxide gate films grown at 150°C by modified reactive ion beam deposition

Hiroshi Yamada
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 26 (1) 36 (2008)
https://doi.org/10.1116/1.2812430

1.5-nm-thick silicon oxide gate films grown at 150°C using modified reactive ion beam deposition with pyrolytic-gas passivation

Hiroshi Yamada
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 25 (2) 340 (2007)
https://doi.org/10.1116/1.2699503

Excess Si and passivating N and F atoms near the pyrolytic-gas-passivated ultrathin silicon oxide film/Si(100) interface

Hiroshi Yamada
Journal of Applied Physics 100 (12) 124508 (2006)
https://doi.org/10.1063/1.2401316

Inhibition of excess interface Si atom generation in 700 °C-grown pyrolytic-gas passivated ultrathin silicon oxide films

Hiroshi Yamada
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23 (4) 599 (2005)
https://doi.org/10.1116/1.1924580

Compositional and structural studies of amorphous silicon-nitrogen alloys deposited at room temperature using a sputtering-type electron cyclotron resonance microwave plasma

Y. C. Liu, K. Furukawa, H. Nakashima, et al.
Philosophical Magazine Part B 79 (1) 137 (1999)
https://doi.org/10.1080/13642819908206788

Infrared study of the Si-H stretching band in a-SiC:H

R. R. Koropecki, F. Alvarez and R. Arce
Journal of Applied Physics 69 (11) 7805 (1991)
https://doi.org/10.1063/1.347509

Growth of native oxide on a silicon surface

M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami and M. Ohwada
Journal of Applied Physics 68 (3) 1272 (1990)
https://doi.org/10.1063/1.347181