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Cited article:

Springer Handbook of Electronic and Photonic Materials

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https://doi.org/10.1007/978-3-319-48933-9_24

Fine particle removal by a negatively-charged fine particle collector in silane plasma

Yuji Kurimoto, Naoki Matsuda, Giichiro Uchida, et al.
Thin Solid Films 457 (2) 285 (2004)
https://doi.org/10.1016/j.tsf.2003.11.300

Experimental and full multiple scattering approaches to energy-loss near-edge structures (ELNES) for c-Si, a-Si and a-Si:H

Kuniko Hayakawa, Takashi Fujikawa and Shunsuke Muto
Chemical Physics Letters 371 (3-4) 498 (2003)
https://doi.org/10.1016/S0009-2614(03)00308-7

Ternary Compounds, Organic Semiconductors

Landolt-Börnstein - Group III Condensed Matter, Ternary Compounds, Organic Semiconductors 41E 1 (2000)
https://doi.org/10.1007/10717201_920

Mechanism of surface reaction in the deposition process ofa-Si:H by rf glow discharge

Keiji Maeda, Atsushi Kuroe and Ikurou Umezu
Physical Review B 51 (16) 10635 (1995)
https://doi.org/10.1103/PhysRevB.51.10635

Molecular Dynamics Simulation of Hydrogenated Amorphous Silicon with Tersoff Potential

Tatsuya Ohira, Takaji Inamuro and Takeshi Adachi
MRS Proceedings 336 (1994)
https://doi.org/10.1557/PROC-336-177

Difference in light‐induced annealing behavior of deposition‐ and light‐induced defects in hydrogenated amorphous silicon

N. Hata and A. Matsuda
Applied Physics Letters 63 (14) 1948 (1993)
https://doi.org/10.1063/1.110610

Investigation of the bubble formation mechanism in a-Si:H films by Fourier-transform infrared microspectroscopy

Y. Mishima and T. Yagishita
Journal of Applied Physics 64 (8) 3972 (1988)
https://doi.org/10.1063/1.341355

Fluorine-incorporation scheme in fluorinated amorphous silicon prepared by various methods

Minoru Kumeda, Yukio Takahashi and Tatsuo Shimizu
Physical Review B 36 (5) 2713 (1987)
https://doi.org/10.1103/PhysRevB.36.2713

Plasma polymerization and deposition of amorphous hydrogenated silicon from rf and dc silane plasmas

R. C. Ross and J. Jaklik
Journal of Applied Physics 55 (10) 3785 (1984)
https://doi.org/10.1063/1.332935