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Cited article:

RF POWER AND TEMPERATURE DEPENDENCES IN GD a-Si PRODUCED FROM HEATED SiH₄

S. Hasegawa, Y. Kurata, Y. Imai, S. Narikawa

J. Phys. Colloques, 42 C4 (1981) C4-675-C4-678

DOI: https://doi.org/10.1051/jphyscol:19814149

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This article has been cited by the following article(s):

Hydrogenated Amorphous Silicon - Electronic and Transport Properties

P.C. Taylor
Semiconductors and Semimetals, Hydrogenated Amorphous Silicon - Electronic and Transport Properties 21 99 (1984)
https://doi.org/10.1016/S0080-8784(08)63067-7

ESR and electrical properties of P-doped microcrystalline Si

S. Hasegawa, S. Narikawa and Y. Kurata
Philosophical Magazine B 48 (5) 431 (1983)
https://doi.org/10.1080/13642818308228569