Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY : ITS APPLICATION TO THE STUDY OF GAP STATES OF a-Si:H

H. Okushi, Y. Tokumaru, S. Yamasaki, H. Oheda, K. Tanaka

J. Phys. Colloques, 42 C4 (1981) C4-613-C4-616

DOI: https://doi.org/10.1051/jphyscol:19814134

PDF (182.2 KB)

This article has been cited by the following article(s):

Density of states measurements in a-Si:H and a-Si:H/nc-Si:H multilayer structures prepared by hot wire chemical vapor deposition

Asha Yadav and Pratima Agarwal
Materials Science in Semiconductor Processing 61 5 (2017)
https://doi.org/10.1016/j.mssp.2016.12.033

Light-induced metastable defects in a-Se90X10(X = Sb, In and Ag) thin films

Anjani Kumar and Ashok Kumar
Phase Transitions 88 (9) 939 (2015)
https://doi.org/10.1080/01411594.2015.1031665

Advances in Amorphous Semiconductors

Advances in Condensed Matter Science, Advances in Amorphous Semiconductors 20035343 158 (2003)
https://doi.org/10.1201/9781420023848.ch7

Temperature dependence of electron-capture cross section of localized states ina−Si:H

H. Okushi, T. Takahama, Y. Tokumaru, et al.
Physical Review B 27 (8) 5184 (1983)
https://doi.org/10.1103/PhysRevB.27.5184