Articles citing this article

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Cited article:

Admittance frequency dependence of Schottky barriers formed on dc triode sputtered amorphous silicon: Hydrogen influence on deep gap state characteristics

D. Mencaraglia, A. Amaral and J. P. Kleider
Journal of Applied Physics 58 (3) 1292 (1985)
https://doi.org/10.1063/1.336097

Study of the distribution of localized states in a-Si:Husing the thermally-stimulated-currents technique

D. S. Misra, A. Kumar and S. C. Agarwal
Physical Review B 31 (2) 1047 (1985)
https://doi.org/10.1103/PhysRevB.31.1047