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This article has been cited by the following article(s):
Raman and optical absorption studies of proton bombarded CsI
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Anomalous defect production in alkali iodides bombarded with high energy argon ions at temperatures between 20 and 300 K
Halogen defect aggregation in KI irradiated between 195 K and 295 K
A.M.T. Allen and J.D. Comins Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 65(1-4) 516 (1992) https://doi.org/10.1016/0168-583X(92)95097-B
Raman study of H-centre aggregation in psi -irradiated RbI: evidence for I3-and I20di-interstitial defects
Electronic defects induced by X-rays in powders of alkaline iodides
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Defect aggregation in gamma-irradiated RbI using optical techniques
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V centers in irradiated alkali halide crystals
E. Rzepka, M. Bernard and S. Lefrant Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 32(1-4) 235 (1988) https://doi.org/10.1016/0168-583X(88)90216-9
Raman scattering induced by V centers and their aggregates in alkali halides