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Cited article:

Fine structure of metal–insulator transition in EuO resolved by doping engineering

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Nanotechnology 29 (19) 195706 (2018)
https://doi.org/10.1088/1361-6528/aab16e

Anomalous Hall effect in the prospective spintronic material Eu1−xGdxO integrated with Si

Oleg E Parfenov, Dmitry V Averyanov, Andrey M Tokmachev, Alexander N Taldenkov and Vyacheslav G Storchak
Journal of Physics: Condensed Matter 28 (22) 226001 (2016)
https://doi.org/10.1088/0953-8984/28/22/226001

Growth and characterization of Sc-doped EuO thin films

S. G. Altendorf, A. Reisner, C. F. Chang, et al.
Applied Physics Letters 104 (5) (2014)
https://doi.org/10.1063/1.4863752

La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature

H. Miyazaki, H. J. Im, K. Terashima, et al.
Applied Physics Letters 96 (23) (2010)
https://doi.org/10.1063/1.3416911

Binary Lanthanide Oxides

W. Suski and T. Palewski
Landolt-Börnstein - Group III Condensed Matter, Binary Lanthanide Oxides 27C1 84 (1997)
https://doi.org/10.1007/10019726_9

Binary Lanthanide Oxides

W. Suski and T. Palewski
Landolt-Börnstein - Group III Condensed Matter, Binary Lanthanide Oxides 27C1 1 (1997)
https://doi.org/10.1007/10019726_1

Binary Lanthanide Oxides

W. Suski and T. Palewski
Landolt-Börnstein - Group III Condensed Matter, Binary Lanthanide Oxides 27C1 121 (1997)
https://doi.org/10.1007/10019726_12

Binary Lanthanide Oxides

W. Suski and T. Palewski
Landolt-Börnstein - Group III Condensed Matter, Binary Lanthanide Oxides 27C1 10 (1997)
https://doi.org/10.1007/10019726_3

Dense excess electrons coupled with localized spins in magnetic semiconductors with doubly charged donors: Eu-rich EuTe

Masakatsu Umehara
Physical Review B 46 (19) 12323 (1992)
https://doi.org/10.1103/PhysRevB.46.12323

Thermally induced abrupt collapse of a shallow donor state in a ferromagnetic semiconductor

David Emin, Mark Hillery and Nai-Li H. Liu
Physical Review B 33 (4) 2933 (1986)
https://doi.org/10.1103/PhysRevB.33.2933