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Cited article:

LASER INDUCED OSCILLATORY PHENOMENA IN AMORPHOUS GeSe₂ FILMS

J. Hajtó

J. Phys. Colloques, 41 C4 (1980) C4-63-C4-69

DOI: https://doi.org/10.1051/jphyscol:1980410

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This article has been cited by the following article(s):

Resonant Raman study on crystalline GeSe2 in relation to amorphous states

O. Matsuda, K. Inoue and K. Murase
Solid State Communications 75 (4) 303 (1990)
https://doi.org/10.1016/0038-1098(90)90901-M

Explanation of the laser-induced oscillatory phenomenon in amorphous semiconductor films

J. Hajtó, J. Jánossy and A. Firth
Philosophical Magazine B 48 (4) 311 (1983)
https://doi.org/10.1080/13642818308246484

Laser-induced phase transition in amorphous GeSe2films

P. Fazekas
Philosophical Magazine Part B 44 (4) 435 (1981)
https://doi.org/10.1080/01418638108222581