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Cited article:
R. Tsu , S.S. Jha
J. Phys. Colloques, 41 C4 (1980) C4-25-C4-30
This article has been cited by the following article(s):
5 articles
Raman image study of flash-lamp annealing of ion-implanted silicon
Kohji Mizoguchi, Hiroshi Harima, Shin-ichi Nakashima and Tohru Hara Journal of Applied Physics 77 (7) 3388 (1995) https://doi.org/10.1063/1.358628
The evaluation of the crystallinity of laser annealed polycrystalline silicon-on-silicon structures by Raman-microprobe polarization measurements
S. Nakashima, Y. Inoue and A. Mitsuishi Journal of Applied Physics 56 (10) 2989 (1984) https://doi.org/10.1063/1.333771
Raman microprobe study of recrystallization in ion-implanted and laser-annealed polycrystalline silicon
S. Nakashima, Y. Inoue, M. Miyauchi, et al. Journal of Applied Physics 54 (5) 2611 (1983) https://doi.org/10.1063/1.332334
Variation of semiconductor band gaps with lattice temperature and with carrier temperature when these are not equal
J. Van Vechten and M. Wautelet Physical Review B 23 (10) 5543 (1981) https://doi.org/10.1103/PhysRevB.23.5543
Plasma annealing state of semiconductors; plasma condensation to a superconductivity- like state at 1000 K?
J.A. Van Vechten and A.D. Compaan Solid State Communications 39 (8) 867 (1981) https://doi.org/10.1016/0038-1098(81)90027-2