Articles citing this article

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Cited article:

Raman image study of flash-lamp annealing of ion-implanted silicon

Kohji Mizoguchi, Hiroshi Harima, Shin-ichi Nakashima and Tohru Hara
Journal of Applied Physics 77 (7) 3388 (1995)
https://doi.org/10.1063/1.358628

The evaluation of the crystallinity of laser annealed polycrystalline silicon-on-silicon structures by Raman-microprobe polarization measurements

S. Nakashima, Y. Inoue and A. Mitsuishi
Journal of Applied Physics 56 (10) 2989 (1984)
https://doi.org/10.1063/1.333771

Raman microprobe study of recrystallization in ion-implanted and laser-annealed polycrystalline silicon

S. Nakashima, Y. Inoue, M. Miyauchi, et al.
Journal of Applied Physics 54 (5) 2611 (1983)
https://doi.org/10.1063/1.332334

Variation of semiconductor band gaps with lattice temperature and with carrier temperature when these are not equal

J. Van Vechten and M. Wautelet
Physical Review B 23 (10) 5543 (1981)
https://doi.org/10.1103/PhysRevB.23.5543

Plasma annealing state of semiconductors; plasma condensation to a superconductivity- like state at 1000 K?

J.A. Van Vechten and A.D. Compaan
Solid State Communications 39 (8) 867 (1981)
https://doi.org/10.1016/0038-1098(81)90027-2